METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM

Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

Saved in:
Bibliographic Details
Main Authors NARWANKAR PRAVIN K, KHER SHREYAS S, AHMED KHALED Z, MA YI
Format Patent
LanguageEnglish
Korean
Published 01.12.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
Bibliography:Application Number: KR20107024107