METHODS FOR FORMING COMPOSITE NANOPARTICLE-METAL METALLIZATION CONTACTS ON A SUBSTRATE

• Main Authors: ABBOTT MALCOLM, TERRY MASON, VANHEUSDEN KAREL, POPLAVSKYY DMITRY, LEMMI FRANCESCO
• Format: Patent
• Language: English; Korean
• Published: 29.11.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.