PUMPING VOLTAGE GENERATING CIRCUIT FOR CONTROLLING BACK BIAS VOLTAGE LEVEL OF A SEMICONDUCTOR MEMORY APPARATUS

PURPOSE: It controls the voltage rising width of the pumping voltage and the pumping voltage generating circuit of the semiconductor memory device for the back bias voltage level control prevents from the back-bias voltage level being enhanced than the ground voltage. CONSTITUTION: The control signa...

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Bibliographic Details
Main Author CHOI, YOUNG KYOUNG
Format Patent
LanguageEnglish
Korean
Published 24.11.2010
Subjects
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRICITY
GENERATION
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE: It controls the voltage rising width of the pumping voltage and the pumping voltage generating circuit of the semiconductor memory device for the back bias voltage level control prevents from the back-bias voltage level being enhanced than the ground voltage. CONSTITUTION: The control signal generating part(100) comprises the drive voltage sensor portion(110), and the maximum pumping voltage sensor portion(120) and signal combination(140). The lowest pumping voltage sensor portion(200) makes the enable signal the enable if the pumping voltage downs than the pumping lowest target level.
Bibliography:Application Number: KR20090042168