SEMICONDUCTOR DEVICE INCLUDING POLYSILICON GATE ELECTRODE USING METAL CATALYST AND METHOD FOR FABRICATING THE SAME
PURPOSE: A semiconductor device including a poly gate electrode using metal catalyst and a manufacturing method thereof are provided to prevent the entry of impurities to a gate insulation layer or channel region by controlling a grain boundary using the metal catalyst when a poly gate electrode is...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
16.11.2010
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A semiconductor device including a poly gate electrode using metal catalyst and a manufacturing method thereof are provided to prevent the entry of impurities to a gate insulation layer or channel region by controlling a grain boundary using the metal catalyst when a poly gate electrode is formed. CONSTITUTION: An insulation layer(200) is formed on a substrate(100). An amorphous silicon layer is formed on the insulation layer. A metal catalyst layer(400) is formed on the amorphous silicon layer. A poly silicon layer(310) is formed by thermally processing the amorphous silicon layer. The poly gate electrode is formed by patterning the poly silicon layer. |
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Bibliography: | Application Number: KR20090039458 |