SEMICONDUCTOR DEVICE INCLUDING POLYSILICON GATE ELECTRODE USING METAL CATALYST AND METHOD FOR FABRICATING THE SAME

PURPOSE: A semiconductor device including a poly gate electrode using metal catalyst and a manufacturing method thereof are provided to prevent the entry of impurities to a gate insulation layer or channel region by controlling a grain boundary using the metal catalyst when a poly gate electrode is...

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Bibliographic Details
Main Authors PARK, KYOUNG WAN, KIM, CHAE HO
Format Patent
LanguageEnglish
Korean
Published 16.11.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device including a poly gate electrode using metal catalyst and a manufacturing method thereof are provided to prevent the entry of impurities to a gate insulation layer or channel region by controlling a grain boundary using the metal catalyst when a poly gate electrode is formed. CONSTITUTION: An insulation layer(200) is formed on a substrate(100). An amorphous silicon layer is formed on the insulation layer. A metal catalyst layer(400) is formed on the amorphous silicon layer. A poly silicon layer(310) is formed by thermally processing the amorphous silicon layer. The poly gate electrode is formed by patterning the poly silicon layer.
Bibliography:Application Number: KR20090039458