THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME

• Main Authors: KIM, SUNG RYUL, CHO, BYEONG HOON, KIM, HYUNG JUN, CHO, SUNG HAENG, SEO, O SUNG, CHO, SUNG HEN, SONG, KI YONG, KIM, JAE HONG, CHOI, YONG MO, KIM, SEONG HUN
• Format: Patent
• Language: English; Korean
• Published: 04.11.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to reduce a channel length of a semiconductor layer and remove a protrusion part of a semiconductor layer. CONSTITUTION: The first pattern layer is formed on a transparent insulating substrate(10). The second pattern layers are formed on both sides of the first pattern layer. A plating unit(360) is formed on at least one side of the second pattern. The first and second pattern layers are continuously formed on the transparent insulating substrate without interposition of another layer.