GLOBAL PLANARIZATON FOR AN ELECTRODE OF A CONTACT-TYPE CAPACITIVE SENSOR
PURPOSE: A global planarization method for electrode of contact-type capacitive sensor, which flattens an electrode pattern, in which metal is filled, toward a substrate of a non-metallic material is provided to reduce signal noise by pattern collision. CONSTITUTION: A global planarization method fo...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
04.11.2010
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A global planarization method for electrode of contact-type capacitive sensor, which flattens an electrode pattern, in which metal is filled, toward a substrate of a non-metallic material is provided to reduce signal noise by pattern collision. CONSTITUTION: A global planarization method for electrode of contact-type capacitive sensor is as follows. Each substrate(100) of a moving element and a fixed element is etched in fixed shape. An electrode material(200) is filled in the etched place. CMP is performed until the filled electrode material has fixed depth. A coating layer is evaporated on the formed electrode. The substrate is composed of a glass wafer. The electrode material is made of chrome. |
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Bibliography: | Application Number: KR20090036498 |