PROCESS FOR PRODUCING PHOTORESIST PATTERN

• Main Authors: KAMABUCHI AKIRA, HATA MITSUHIRO
• Format: Patent
• Language: English; Korean
• Published: 02.11.2010
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE: A method for forming a photo-resist pattern is provided to obtain a targeted fine photo-resist pattern by forming a second photo-resist pattern between the lines of a first photo-resist pattern. CONSTITUTION: A first photo-resist film on a substrate is pre-baked. The pre-baked first photo-resist film is exposed to radioactive ray. The exposed first photo-resist film is baked. The baked first photo-resist film is developed using a first alkaline developing solution in order to form a first photo-resist pattern. The first photo-resist pattern is deactivated with respect to radio-active ray and a second photo-resist composition. The second photo-resist composition is applied to the substrate with the first photo-resist pattern. The second photo-resist composition on the substrate is dried in order to form a second photo-resist film. The second photo-resist pattern is formed through the same processes as the processes for forming the first photo-resist film.