METHOD OF FORMING NONVOLATILE MEMORY DEVICE

• Main Authors: CHAE, SOO DOO, KIM, JIN GYUN, SHIN, SEUNG MOK
• Format: Patent
• Language: English; Korean
• Published: 08.10.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method of forming a nonvolatile memory device is provided to easily control the width of conductive films and an insulating layers to be etched. CONSTITUTION: In a method of manufacturing a non-volatile memory device, n insulting layers and n conductive layers(CLn,CLn-1,CLn-2) are alternately laminated on a substrate. A nonphotosensitive pattern is formed on the laminated insulating layers and conductive layers. An i-th conductive layer and an i-th insulating layer are etched by using the nonphotosensitive pattern as an etch mask. The lateral part of the nonphotosensitive pattern is etched. The i-th conductive layer, an i-1-th conductive layer, the i-th insulating layer, i-1-th insulating layer are etched by using etched nonphotosensitive pattern as an etch mask.