METAL COMPOUND, CHEMICAL VAPOR DEPOSITION MATERIAL CONTAINING THE SAME, AND METHOD FOR PRODUCING METAL-CONTAINING THIN FILM
A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are pref...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
04.10.2010
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Subjects | |
Online Access | Get full text |
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Summary: | A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin.
In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2. |
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Bibliography: | Application Number: KR20107009857 |