PROCESS APPARATUS USING PLASMA WHICH INJECTS AND VENTS PROOCESS GAS THROUGH INNER SIDE WALL OF PROCESS CHAMBER, AND METHOD OF PROCESSING A SUBSTRATE USING THE SAME

PURPOSE: A plasma processing apparatus and a method for processing substrates are provided to improve the vacuum uniformity on the surface of the substrates in a processing chamber by minimizing spaces through which a processing gas or a washing gas is supplied. CONSTITUTION: A chamber(100) forms a...

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Bibliographic Details
Main Authors HAN, SUN SEOK, LEE, JEONG BEOM
Format Patent
LanguageEnglish
Korean
Published 29.09.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A plasma processing apparatus and a method for processing substrates are provided to improve the vacuum uniformity on the surface of the substrates in a processing chamber by minimizing spaces through which a processing gas or a washing gas is supplied. CONSTITUTION: A chamber(100) forms a reaction space. A first spraying port(132) on the first sidewall of the chamber sprays a processing gas. A first discharging port(162) on the second sidewall of the chamber discharges a discharging gas. Substrates are loaded on the upper side of a susceptor(110). A plasma electrode(140) is connected with radio-frequency power source supplying radio frequency power.
Bibliography:Application Number: KR20100085542