METHOD AND ARRANGEMENT FOR TEMPERING SiC WAFERS

The invention relates to a method and an arrangement for tempering SiC wafers. The invention is to provide a method and an arrangement for tempering SiC wafers for generating a sufficient silicon partial pressure in the processing chamber and while reducing the operating costs. This is achieved in t...

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Bibliographic Details
Main Authors UWE KEIM, HARTUNG ROBERT MICHAEL
Format Patent
LanguageEnglish
Korean
Published 17.09.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a method and an arrangement for tempering SiC wafers. The invention is to provide a method and an arrangement for tempering SiC wafers for generating a sufficient silicon partial pressure in the processing chamber and while reducing the operating costs. This is achieved in that a source for at least vaporized or gaseous silicon to increase the silicon partial pressure is connected to the processing chamber (2) for receiving at least one wafer (3), wherein said source is a vaporizer (4) having liquefied silicon fragments (11), to which a carrier gas can be supplied, which generates a gas flow via a silicone melt, and the vaporizer (4) is connected via a pipeline (5) to the processing chamber (2) or is disposed therein.
Bibliography:Application Number: KR20107014558