NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

PURPOSE: A nonvolatile semiconductor memory and its manufacturing method are provided to independently control a memory transistor by differently forming a control gate electrode of all memory transistors belonging to a memory string. CONSTITUTION: A plurality of insulating layers(15) and a membrane...

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Main Authors FUKUZUMI YOSHIAKI, KIDOH MASARU, TANAKA HIROYASU, KATSUMATA RYOTA, ISHIDUKI MEGUMI, KITO MASARU, KOMORI YOSUKE, AOCHI HIDEAKI
Format Patent
LanguageEnglish
Korean
Published 25.08.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A nonvolatile semiconductor memory and its manufacturing method are provided to independently control a memory transistor by differently forming a control gate electrode of all memory transistors belonging to a memory string. CONSTITUTION: A plurality of insulating layers(15) and a membrane electrode assembly is alternately laminated on a laminate(ML). A selection gate electrode is formed on the laminate. A pillar(31) penetrates a control gate electrode and the selection gate electrode. A plurality of source lines is connected the top end part of a part of a semiconductor pillar. A plurality of bit lines is connected to the top end part of the rest of the pillar. A plurality of through holes is formed in the selection gate electrode and insulating layer.
Bibliography:Application Number: KR20100013281