A SLURRY COMPOSITION FOR FORMING TUNGSTEN LINE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

PURPOSE: A slurry composition for forming a tungsten line, and a manufacturing method of a semiconductor device using thereof are provided to reduce the generation of a scratch during a polishing process with the improved dispersibility. CONSTITUTION: A slurry composition for forming a tungsten line...

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Bibliographic Details
Main Authors KIM, SEOK JOO, HAN, DEOK SU, JEONG, EUN IL, PARK, HYU BUM
Format Patent
LanguageEnglish
Korean
Published 19.08.2010
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A slurry composition for forming a tungsten line, and a manufacturing method of a semiconductor device using thereof are provided to reduce the generation of a scratch during a polishing process with the improved dispersibility. CONSTITUTION: A slurry composition for forming a tungsten line contains the following: silica as an abrasive; a diffusion barrier grinding controlling agent selected from the group consisting of iodic acid, iodic acid salt, amino alcohol, organic phosphorous acid, and a chelating agent including an amine group and a carboxylate group; and an anticorrosive agent selected from the group consisting of hydroxyethyl iminodiacetic acid, diethylenetriamine pentaacetic acid, N-[2-acetamido]-2-iminodiacetic acid, glycine, dimethylamine, diethylamine, and taurine.
Bibliography:Application Number: KR20090010415