SELECTIVE ETCHING AND FORMATION OF XENON DIFLUORIDE

• Main Authors: WU DINGJUN, MALLIKARJUNAN ANUPAMA, KARWACKI EUGENE JOSEPH JR, JOHNSON ANDREW DAVID
• Format: Patent
• Language: English; Korean
• Published: 05.08.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PURPOSE: Methods for selective etching and xenon difluoride formation are provided to promote cleaning of a deposition reactor between deposition cycles by connecting a distance downstream plasma unit to a process reactor and accommodating processing gas. CONSTITUTION: A selective etching method comprises the steps of: providing a structural material containing a first material and a second material to a chamber, providing etchant gas to the chamber, contacting the structural material to the etchant gas and selectively converting the first material to volatile species, and selectively etching the first material to the second material which includes the volatile species from the chamber, wherein the first material is selected from the group consisting of silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic and their mixture and the second material is selected from the group consisting of silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phospho silicate glass, boron phosphorous silicate glass, polyimide, gold, copper, platinum, chrome, aluminium oxide, silicon carbide and their mixture.