SEMICONDUCTOR LIGHT EMITTING DEVICE

PURPOSE: A semiconductor light emitting device is provided to prevent an electrical characteristic from being reduce due to the change of the thickness of a p-type semiconductor layer by forming a surface Plasmon layer to be adjacent to an active layer. CONSTITUTION: An n-type semiconductor layer(10...

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Main Authors CHO, CHANG HEE, KIM, DONG JOON, KWON, MIN KI, SEO, SEUNG BEOM, LEE, DONG YUL, KIM, YONG CHUN, CHO, CHU YOUNG, CHEONG, MYUNG GOO, PARK, SEONG JU
Format Patent
LanguageEnglish
Korean
Published 29.07.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor light emitting device is provided to prevent an electrical characteristic from being reduce due to the change of the thickness of a p-type semiconductor layer by forming a surface Plasmon layer to be adjacent to an active layer. CONSTITUTION: An n-type semiconductor layer(102) is formed on a substrate(101). A surface Plasmon layer(103) is formed on the n-type semiconductor layer. An active layer(104) is formed on the surface Plasmon layer. A p-type semiconductor layer(105) is formed on the active layer. An n-type electrode(106a) and a p-type semiconductor electrode(106b) are formed on the n-type and the p-type semiconductor layers, respectively. The surface Plasmon layer includes a conductive via for conductive electricity.
Bibliography:Application Number: KR20090004547