THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME

• Main Authors: MO, YEON GON, PARK, JIN SEONG, JEONG, JAE KYEONG, CHUNG, HYUN JOONG, KIM, EUN HYUN, AHN, TAE KYUNG, KIM, MIN KYU
• Format: Patent
• Language: English; Korean
• Published: 21.07.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A thin film transistor and a flat display device including the same are provided to implement a large flat display device with high image quality by improving a current-voltage property by a copper wiring with small resistivity by interposing a titanium layer between the source and drain electrodes and the oxide semiconductor layer. CONSTITUTION: A gate electrode(12) is formed on a substrate(10). A gate insulation layer(13) is formed on the upper side including the gate electrode. An oxide semiconductor layer(14) is formed on the gate insulation layer including the gate electrode. A titanium layer(15) is formed on a source area(14a) and a drain area(14b) of the oxide semiconductor layer. A source electrode(16a) and a drain electrode(16b) are connected to the source region and the drain region through the titanium layer.