TEST METHOD OF FLASH MEMORY DEVICE
PURPOSE: A test method of a flash memory device is provided to reduce a column leakage due to overstress by erasing over-erased cells having a damage tunnel oxide film to be normal. CONSTITUTION: A photoresist pattern defining an element isolation film is formed on a semiconductor substrate(20). The...
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| Main Author | |
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| Format | Patent |
| Language | English Korean |
| Published |
08.07.2010
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| Subjects | |
| Online Access | Get full text |
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| Abstract | PURPOSE: A test method of a flash memory device is provided to reduce a column leakage due to overstress by erasing over-erased cells having a damage tunnel oxide film to be normal. CONSTITUTION: A photoresist pattern defining an element isolation film is formed on a semiconductor substrate(20). The element isolation film(26) is formed on a substrate. A P well and N well are formed on the semiconductor substrate. A floating gate(28) is formed by evaporating a first polysilicon layer in a cell region. An oxide-nitride-oxide film(29) is formed on the floating gate of the cell region. A control gate(30a) and a gate(30b) are formed in the cell region and peripheral area. A spacer(32) is formed in a control gate and both sides of the gate. An interlayer insulating film(34) is formed on the semiconductor substrate. |
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| AbstractList | PURPOSE: A test method of a flash memory device is provided to reduce a column leakage due to overstress by erasing over-erased cells having a damage tunnel oxide film to be normal. CONSTITUTION: A photoresist pattern defining an element isolation film is formed on a semiconductor substrate(20). The element isolation film(26) is formed on a substrate. A P well and N well are formed on the semiconductor substrate. A floating gate(28) is formed by evaporating a first polysilicon layer in a cell region. An oxide-nitride-oxide film(29) is formed on the floating gate of the cell region. A control gate(30a) and a gate(30b) are formed in the cell region and peripheral area. A spacer(32) is formed in a control gate and both sides of the gate. An interlayer insulating film(34) is formed on the semiconductor substrate. |
| Author | JEONG, YOUNG SEOK |
| Author_xml | – fullname: JEONG, YOUNG SEOK |
| BookMark | eNrjYmDJy89L5WRQCnENDlHwdQ3x8HdR8HdTcPNxDPYA8n39gyIVXFzDPJ1deRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJvHeQkYGhgYGBhYGhmamjMXGqAIslJL4 |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences Physics |
| ExternalDocumentID | KR20100080165A |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_KR20100080165A3 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 11:27:16 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English Korean |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_KR20100080165A3 |
| Notes | Application Number: KR20080138809 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100708&DB=EPODOC&CC=KR&NR=20100080165A |
| ParticipantIDs | epo_espacenet_KR20100080165A |
| PublicationCentury | 2000 |
| PublicationDate | 20100708 |
| PublicationDateYYYYMMDD | 2010-07-08 |
| PublicationDate_xml | – month: 07 year: 2010 text: 20100708 day: 08 |
| PublicationDecade | 2010 |
| PublicationYear | 2010 |
| RelatedCompanies | DONGBU HITEK CO., LTD |
| RelatedCompanies_xml | – name: DONGBU HITEK CO., LTD |
| Score | 2.7583401 |
| Snippet | PURPOSE: A test method of a flash memory device is provided to reduce a column leakage due to overstress by erasing over-erased cells having a damage tunnel... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| Title | TEST METHOD OF FLASH MEMORY DEVICE |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100708&DB=EPODOC&locale=&CC=KR&NR=20100080165A |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR3LTsJAcIL4vGnV-EDTqOmtcUsfwKEx0G5TxVJSKsET2b4SoxEiNf6-s0tRThxnJpl9JLPzngW4M5ipm4xkajslfKh2wlTWbKYqIRna62giFBkP6AcDy38xnibmpAYfq14YMSf0RwxHRIlKUd5L8V7P_4NYrqitXNwnb4iaPXix7SqVd8xT_qStuD2bDkM3dBTHsfuRMoiWNLSONMvsbsE2N6T5pH067vG-lPm6UvEOYWeI_D7LI6i9zyTYd1Z_r0mwF1Qpbwl2RY1mukBkJYeLY7iJ6SiWAxr7oSuHnuw9d0c-wkEYvcouHT869ARuPRo7vorLTv9OOe1H63vUT6GO_n9-BjIKoUWYbhim3jKYnncK9FlaOdEKjXWMjJxDYxOni83kSzhA0FzWtDWgXn5951eoZ8vkWlzPL4SaenA |
| link.rule.ids | 230,309,786,891,25594,76904 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8JAEJ4gPvCmVeMDtVHTW-NCW1oOjYHuNkVaSkoleCJLWxKjESI1_n2nCygnjjuTzD6Sb-e1MwvwoHNDMzhJVSshRVPtCVd5vZ6ohKRor6OJME2LgH7Qa3gv-vPIGJXgY10LI_qE_ojmiIioBPGei_t6_h_EouJt5eJx8oak2ZMb21RZecdFyp9YCm3brB_S0FEcx-5GSi9a8tA6qjWM1g7smugUFp322bBd1KXMN5WKewR7fZT3mR9D6X0mQcVZ_70mwUGwSnlLsC_eaCYLJK5wuDiBu5gNYjlgsRdSOXRl128NPBwHYfQqUzbsOOwU7l0WO56K047_djnuRptr1M6gjP5_dg4ygrBBuKbrhmbqXMuaU_RZzIzUpjXe1FNyAdVtki63s2-h4sWBP_Y7ve4VHC6T46ZKrCqU86_v7Bp1bj65EUf1C2QpfVw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=TEST+METHOD+OF+FLASH+MEMORY+DEVICE&rft.inventor=JEONG%2C+YOUNG+SEOK&rft.date=2010-07-08&rft.externalDBID=A&rft.externalDocID=KR20100080165A |