TEST METHOD OF FLASH MEMORY DEVICE

PURPOSE: A test method of a flash memory device is provided to reduce a column leakage due to overstress by erasing over-erased cells having a damage tunnel oxide film to be normal. CONSTITUTION: A photoresist pattern defining an element isolation film is formed on a semiconductor substrate(20). The...

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Bibliographic Details
Main Author JEONG, YOUNG SEOK
Format Patent
LanguageEnglish
Korean
Published 08.07.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PURPOSE: A test method of a flash memory device is provided to reduce a column leakage due to overstress by erasing over-erased cells having a damage tunnel oxide film to be normal. CONSTITUTION: A photoresist pattern defining an element isolation film is formed on a semiconductor substrate(20). The element isolation film(26) is formed on a substrate. A P well and N well are formed on the semiconductor substrate. A floating gate(28) is formed by evaporating a first polysilicon layer in a cell region. An oxide-nitride-oxide film(29) is formed on the floating gate of the cell region. A control gate(30a) and a gate(30b) are formed in the cell region and peripheral area. A spacer(32) is formed in a control gate and both sides of the gate. An interlayer insulating film(34) is formed on the semiconductor substrate.
Bibliography:Application Number: KR20080138809