METHOD FOR MANUFACTURING BACK SIDE ILLUMINATION IMAGE SENSOR

PURPOSE: A manufacturing method of a backside illuminating image sensor is provided to effectively remove the defect from the surface of a substrate without damage due to plasma by performing a wet etching process after removing the backside from the substrate. CONSTITUTION: An ion implantation laye...

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Bibliographic Details
Main Author KIM, MUN HWAN
Format Patent
LanguageEnglish
Korean
Published 06.07.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A manufacturing method of a backside illuminating image sensor is provided to effectively remove the defect from the surface of a substrate without damage due to plasma by performing a wet etching process after removing the backside from the substrate. CONSTITUTION: An ion implantation layer is formed wholly on the front side of a first substrate. A pixel area is defined by forming an element isolation area(110) on the front side of the first substrate. A light sensing part(120) and a readout circuit(130) are formed on the pixel area. An interlayer dielectric layer(160) and a wiring(140) are formed in the front side of the first substrate. A second substrate(200) is bonded to the front side of the first substrate in which the wiring is formed. The lower of the first substrate is removed from the ion implantation layer. A wet etching is performed on the back side of the first substrate.
Bibliography:Application Number: KR20080134588