METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE

• Main Authors: FIGUET CHRISTOPHE, DROUIN ALEXIS, BOUVIER CHRISTOPHE, MAURICE THIBAUT, CAILLER CELINE
• Format: Patent
• Language: English; Korean
• Published: 02.07.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

PURPOSE: A method for fabricating a semiconductor substrate and a semiconductor substrate are provided to have improved photon / electron conversion efficiency under a short wavelength of a blue light. CONSTITUTION: A semiconductor substrate on a dielectric material includes a base layer(3), a insulating layer(5), and a first semiconductor layer having a first dopant concentration. A diffused layer is provided. The second semiconductor layer(11) has a second dopant concentration different from a first dopant concentration and includes same material as the first semiconductor layer.