THE FABRICATING METHOD OF SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing a semiconductor device is provided to stably improve the operation of the semiconductor device by preventing high-concentration dopants from excessively doping into a high-voltage device region. CONSTITUTION: A cell region and a peripheral circuit region with a hi...

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Bibliographic Details
Main Authors CHOE, BYEONG IN, CHOI, JUNG DAL, LEE, CHANG HYUN, SEL, JONG SUN
Format Patent
LanguageEnglish
Korean
Published 02.07.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for manufacturing a semiconductor device is provided to stably improve the operation of the semiconductor device by preventing high-concentration dopants from excessively doping into a high-voltage device region. CONSTITUTION: A cell region and a peripheral circuit region with a high-voltage transistor(HVT) are defined in a p-type semiconductor substrate. A photo-resist pattern exposes a part of the cell region, the element isolation film(116) of the region with the high-voltage transistor, and a region with a low-voltage transistor(LVT). A p-type dopant is implanted using the photo-resist pattern as an ion-implantation mask.
Bibliography:Application Number: KR20080133451