SOI RADIO FREQUENCY SWITCH WITH ENHANCED SIGNAL FIDELITY AND ELECTRICAL ISOLATION

• Main Authors: SLINKMAN JAMES ALBERT, SHI YUN, BOTULA ALAN BERNARD, NOWAK EDWARD J, JOSEPH ALVIN JOSE
• Format: Patent
• Language: English; Korean
• Published: 01.07.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for forming a semiconductor structure, a method for operating a semiconductor device, and the semiconductor structure are provided to reduce signal distortion and a harmonic signal in an RF switch by rapidly discharging a charge carrier. CONSTITUTION: A doped contact area is formed under a built-in insulator layer inside a bottom semiconductor layer(10) of an SOI(Semiconductor-On-Insulator) substrate. At least one conductive via structure is extended from a mutual connection-level metal line to the doped contact area via an MOL dielectric layer(80), a trench isolation structure(33), and the built-in insulator layer. An inversion layer is not formed inside the induced charge layer by biasing the doped contact area in a peak voltage inside an RF switch or an approximately peak voltage. The charge in the inversion layer is drained through at least one conductive via structure and the doped contact area.