IMAGE SENSOR

PURPOSE: An image sensor is provided to suppress image deterioration by reducing a dead zone due to image lagging. CONSTITUTION: A transmission transistor is formed on a semiconductor substrate. A photodiode region is formed on one side of the transmission transistor. The photodiode region includes...

Full description

Saved in:
Bibliographic Details
Main Author SHIN, HYUN TAEK
Format Patent
LanguageEnglish
Korean
Published 29.06.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: An image sensor is provided to suppress image deterioration by reducing a dead zone due to image lagging. CONSTITUTION: A transmission transistor is formed on a semiconductor substrate. A photodiode region is formed on one side of the transmission transistor. The photodiode region includes a first ion implantation region(510a,510b,510c,510d) and a second ion implantation region(520). The first ion implantation region has a taper shape. A floating diffusion node is formed on the other side of the transmission transistor.
Bibliography:Application Number: KR20080129906