METHOD FOR IMPROVED THICKNESS REPEATABILITY OF PECVD DEPOSITED CARBON FILMS

PURPOSE: A method for improving the thickness repeatability of plasma enchanced-CVD(PECVD) deposited carbon-based films is provided to uniform the thickness of a wafer-to-wafer using a dimethyl-fluoride in order to stabilize acetylene. CONSTITUTION: A pressurized acetylene container, which includes...

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Bibliographic Details
Main Authors SCULAC ROBERT, HSU GISHUN, STODDARD SCOTT, HENRI JON
Format Patent
LanguageEnglish
Korean
Published 22.06.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for improving the thickness repeatability of plasma enchanced-CVD(PECVD) deposited carbon-based films is provided to uniform the thickness of a wafer-to-wafer using a dimethyl-fluoride in order to stabilize acetylene. CONSTITUTION: A pressurized acetylene container, which includes a solvent with around or less than 10 torr of steam pressure at 25°C, is prepared. An acetylene gas stream is delivered from the container to a deposition chamber in order to form a carbon-based film. The carbon-based film is laminated on a semiconductor substrate through the CVD reaction of the acetylene. The carbon-based film is successively laminated on a plurality of semiconductor substrates through the CVD reaction of the acetylene.
Bibliography:Application Number: KR20090123999