MEASUREMENT METHOD, STAGE APPARATUS, AND EXPOSURE APPARATUS
An exposure apparatus having improved positioning accuracy etc. of a stage achieved by reducing an influence of a variation in the refraction factor of surrounding gas. In the exposure apparatus, exposure light is applied to a wafer (W) on a wafer stage (WST) through a projection optical system (PL)...
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Main Author | |
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Format | Patent |
Language | English Korean |
Published |
04.06.2010
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Subjects | |
Online Access | Get full text |
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Summary: | An exposure apparatus having improved positioning accuracy etc. of a stage achieved by reducing an influence of a variation in the refraction factor of surrounding gas. In the exposure apparatus, exposure light is applied to a wafer (W) on a wafer stage (WST) through a projection optical system (PL) to form a predetermined pattern on the wafer (W). The exposure apparatus has a scale provided at the wafer stage (WST), X-heads (66) for detecting positional information on the scale, a measurement frame (21) integrally supporting the X-heads (66) and having a linear expansion coefficient smaller than that of a body section of the wafer stage (WST), and a control device for obtaining information on displacement of the wafer stage (WST) from the result of detection by the X-heads (66). |
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Bibliography: | Application Number: KR20107003290 |