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Summary:An exposure apparatus having improved positioning accuracy etc. of a stage achieved by reducing an influence of a variation in the refraction factor of surrounding gas. In the exposure apparatus, exposure light is applied to a wafer (W) on a wafer stage (WST) through a projection optical system (PL) to form a predetermined pattern on the wafer (W). The exposure apparatus has a scale provided at the wafer stage (WST), X-heads (66) for detecting positional information on the scale, a measurement frame (21) integrally supporting the X-heads (66) and having a linear expansion coefficient smaller than that of a body section of the wafer stage (WST), and a control device for obtaining information on displacement of the wafer stage (WST) from the result of detection by the X-heads (66).
Bibliography:Application Number: KR20107003290