METAL-INSULATOR-METAL CAPACITOR FORMING METHOD FOR SEMICONDUCTOR DEVICE

PURPOSE: A MIM(Metal-insulator-metal) capacitor manufacturing method for a semiconductor device is provided to reduce the area of a chip and manufacture a reliable semiconductor by designing a MIM capacitor having an area corresponding to voltage generated for actual use. CONSTITUTION: A diffusion b...

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Bibliographic Details
Main Author KWAK, SUNG HO
Format Patent
LanguageEnglish
Korean
Published 04.06.2010
Subjects
ELECTRICITY
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Summary:PURPOSE: A MIM(Metal-insulator-metal) capacitor manufacturing method for a semiconductor device is provided to reduce the area of a chip and manufacture a reliable semiconductor by designing a MIM capacitor having an area corresponding to voltage generated for actual use. CONSTITUTION: A diffusion barrier(120), a bottom conductive layer(130), and a dielectric layer(140) are formed on the semiconductor substrate, sequentially. The area of the dielectric layer applied with the high voltage is applied is patterned as a first photoresist(150). The dielectric layer for the low voltage is evaporated on the bottom conductive layer.
Bibliography:Application Number: KR20080117341