METHOD AND SEMICONDUCTOR MANUFACTURING SYSTEM FOR DETECTING BAD WAFER USING STANDARD DATABASE OPTICAL CRITICAL DIMENSION

PURPOSE: A method for detecting a bad wafer using a data-based standard optical critical dimension and a system for manufacturing a semiconductor using the same are provided to improve productivity by omitting subsequent processes with respect to the bad wafer. CONSTITUTION: A wafer is loaded in a m...

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Bibliographic Details
Main Author HAN, DONG HYUN
Format Patent
LanguageEnglish
Korean
Published 20.05.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:PURPOSE: A method for detecting a bad wafer using a data-based standard optical critical dimension and a system for manufacturing a semiconductor using the same are provided to improve productivity by omitting subsequent processes with respect to the bad wafer. CONSTITUTION: A wafer is loaded in a measurement unit(S200). Light is radiated to the optical critical measurement pattern of the loaded wafer(S210). Reflected light from the loaded wafer is detected(S220). A sample data for a comparison process is prepared(S230). The reflected light is compared to the sample data(S240). If different spectrum data is verified, the subsequent processes for the wafer is not proceeded(S255).
Bibliography:Application Number: KR20080112048