NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: A nonvolatile semiconductor memory device and a manufacturing method thereof are provided to reduce costs by reducing a chip size per one bit by laminating a plurality of electrode layers on a silicon substrate. CONSTITUTION: A plurality of insulating layers(15) and electrode layers(16) are...

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Main Authors FUKUZUMI YOSHIAKI, KIDOH MASARU, TANAKA HIROYASU, KATSUMATA RYOTA, ISHIDUKI MEGUMI, KITO MASARU, KOMORI YOSUKE, AOCHI HIDEAKI
Format Patent
LanguageEnglish
Korean
Published 13.05.2010
Subjects
ELECTRICITY
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Summary:PURPOSE: A nonvolatile semiconductor memory device and a manufacturing method thereof are provided to reduce costs by reducing a chip size per one bit by laminating a plurality of electrode layers on a silicon substrate. CONSTITUTION: A plurality of insulating layers(15) and electrode layers(16) are alternatively laminated on a first laminate(ML1). A second laminate(ML2) is formed on the first laminate. A plurality of insulating layers(17) and electrode layers(18) are alternatively laminated on the second laminate. A penetration hole(36) passes through the first and second laminates. The insulating layer is formed on the inner surface of the penetration hole. A semiconductor pillar is buried inside the penetration hole.
Bibliography:Application Number: KR20090105870