SOI SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
PURPOSE: A silicon on insulator(SOI) substrate and a method for manufacturing the same are provided to improve the mechanical strength of the SOI substrate by including a monocrystalline semiconductor layer with at least one of nitrogen, oxygen or carbon. CONSTITUTION: An embrittled region(104) is f...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
30.04.2010
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A silicon on insulator(SOI) substrate and a method for manufacturing the same are provided to improve the mechanical strength of the SOI substrate by including a monocrystalline semiconductor layer with at least one of nitrogen, oxygen or carbon. CONSTITUTION: An embrittled region(104) is formed on the surface of a monocrystalline semiconductor substrate(100) by implanting hydrogen. An insulation layer(102) is interposed between the mono crystalline semiconductor substrate and a base substrate(120). The monocrystalline semiconductor substrate is heated. A semiconductor layer is formed on the base substrate through the insulation layer. The surface part of the semiconductor layer is melted. |
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Bibliography: | Application Number: KR20090098600 |