SOI SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: A silicon on insulator(SOI) substrate and a method for manufacturing the same are provided to improve the mechanical strength of the SOI substrate by including a monocrystalline semiconductor layer with at least one of nitrogen, oxygen or carbon. CONSTITUTION: An embrittled region(104) is f...

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Bibliographic Details
Main Authors OHNUMA HIDETO, HIGA EIJI
Format Patent
LanguageEnglish
Korean
Published 30.04.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A silicon on insulator(SOI) substrate and a method for manufacturing the same are provided to improve the mechanical strength of the SOI substrate by including a monocrystalline semiconductor layer with at least one of nitrogen, oxygen or carbon. CONSTITUTION: An embrittled region(104) is formed on the surface of a monocrystalline semiconductor substrate(100) by implanting hydrogen. An insulation layer(102) is interposed between the mono crystalline semiconductor substrate and a base substrate(120). The monocrystalline semiconductor substrate is heated. A semiconductor layer is formed on the base substrate through the insulation layer. The surface part of the semiconductor layer is melted.
Bibliography:Application Number: KR20090098600