SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

PURPOSE: A semiconductor devices and methods of forming the same are provided to improve the electrical property of a metal oxide by supplying an oxygen in the sacrificial oxide to a metal oxide. CONSTITUTION: A metal oxide layer is formed on a substrate(100) as a single layer or a multilayer. A sac...

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Main Authors HONG, HYUNG SEOK, SHIN, YU GYUN, LEE, HYO SAN, SEO, KANG ILL, NA, HOON JOO, PARK, JUN WOONG, CHOI, SI YOUNG, HYUN, SANG JIN, LEE, HYE LAN, CHO, HAG JU
Format Patent
LanguageEnglish
Korean
Published 29.04.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor devices and methods of forming the same are provided to improve the electrical property of a metal oxide by supplying an oxygen in the sacrificial oxide to a metal oxide. CONSTITUTION: A metal oxide layer is formed on a substrate(100) as a single layer or a multilayer. A sacrificial oxide is formed on the metal oxide layer. A thermal treatment process on the substrate having the sacrificial oxide. In the thermal treatment process, a free energy of the sacrificial oxide is higher than that of the metal oxide.
Bibliography:Application Number: KR20080103197