MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

• Main Authors: MOMO JUNPEI, NEI KOSEI, HONDA HIROAKI, KOYAMA MASAKI, SHIMOMURA AKIHISA
• Format: Patent
• Language: English; Korean
• Published: 12.04.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

PURPOSE: A method for manufacturing a semiconductor substrate and a semiconductor device are provided to obtain mono crystalline semiconductor layers with improved crystallinity and flatness by optimizing laser radiation intensity for the mono crystalline semiconductor layers. CONSTITUTION: Ions are radiated on each mono-crystalline semiconductor substrate(100) to form an embrittlement layer(102). An insulation layer(111) is formed on at least one of mono crystalline semiconductors or base substrates(110). The mono crystalline semiconductor substrates and the insulation layers are arranged on the base substrate. The mono crystalline semiconductor layers are fixed on the base substrates. Laser beams with different energy densities(113) are radiated to a plurality of regions of the mono crystalline semiconductor layer. The detection signal of a reflected microwave from the mono crystalline semiconductor layers is detected by a microwave photo conductive decay method.