METHOD FOR REDUCING MICROLOADING IN ETCHING HIGH ASPECT RATIO STRUCTURES

A method for etching features of different aspect ratios in a conductive layer is provided. The method comprises: depositing over the conductive layer with an aspect ratio dependent deposition; etching features into the conductive layer with an aspect ratio dependent etching of the conductive layer;...

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Bibliographic Details
Main Authors LEE, WON CHUL, FU QIAN, LIU SHENJIAN, PU BRYAN
Format Patent
LanguageEnglish
Korean
Published 02.04.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for etching features of different aspect ratios in a conductive layer is provided. The method comprises: depositing over the conductive layer with an aspect ratio dependent deposition; etching features into the conductive layer with an aspect ratio dependent etching of the conductive layer; and repeating the depositing and the etching at least once.
Bibliography:Application Number: KR20097027614