NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

PURPOSE: A nonvolatile semiconductor memory device and manufacturing method thereof improve the internal fabric of the memory device. The constant resistance between the drain section selecting transistor and the memory string are controlled. CONSTITUTION: A nonvolatile semiconductor memory device(1...

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Main Authors FUKUZUMI YOSHIAKI, KIDOH MASARU, TANAKA HIROYASU, KATSUMATA RYOTA, ISHIDUKI MEGUMI, KITO MASARU, KOMORI YOSUKE, AOCHI HIDEAKI
Format Patent
LanguageEnglish
Korean
Published 02.04.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract PURPOSE: A nonvolatile semiconductor memory device and manufacturing method thereof improve the internal fabric of the memory device. The constant resistance between the drain section selecting transistor and the memory string are controlled. CONSTITUTION: A nonvolatile semiconductor memory device(100) comprises a plurality of memory strings(12) and plurality of selecting transistors. The memory string of each plurality comprises the semiconductor layer, and the charge storage layer and the first conductive layer. The semiconductor layer comprises a pair of columns and connection part. The first conductive layer functions as the control electrode of the memory cell.
AbstractList PURPOSE: A nonvolatile semiconductor memory device and manufacturing method thereof improve the internal fabric of the memory device. The constant resistance between the drain section selecting transistor and the memory string are controlled. CONSTITUTION: A nonvolatile semiconductor memory device(100) comprises a plurality of memory strings(12) and plurality of selecting transistors. The memory string of each plurality comprises the semiconductor layer, and the charge storage layer and the first conductive layer. The semiconductor layer comprises a pair of columns and connection part. The first conductive layer functions as the control electrode of the memory cell.
Author AOCHI HIDEAKI
ISHIDUKI MEGUMI
FUKUZUMI YOSHIAKI
KATSUMATA RYOTA
KOMORI YOSUKE
KITO MASARU
TANAKA HIROYASU
KIDOH MASARU
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– fullname: ISHIDUKI MEGUMI
– fullname: KITO MASARU
– fullname: KOMORI YOSUKE
– fullname: AOCHI HIDEAKI
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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