NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
PURPOSE: A nonvolatile semiconductor memory device and manufacturing method thereof improve the internal fabric of the memory device. The constant resistance between the drain section selecting transistor and the memory string are controlled. CONSTITUTION: A nonvolatile semiconductor memory device(1...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English Korean |
Published |
02.04.2010
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A nonvolatile semiconductor memory device and manufacturing method thereof improve the internal fabric of the memory device. The constant resistance between the drain section selecting transistor and the memory string are controlled. CONSTITUTION: A nonvolatile semiconductor memory device(100) comprises a plurality of memory strings(12) and plurality of selecting transistors. The memory string of each plurality comprises the semiconductor layer, and the charge storage layer and the first conductive layer. The semiconductor layer comprises a pair of columns and connection part. The first conductive layer functions as the control electrode of the memory cell. |
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Bibliography: | Application Number: KR20090087023 |