WAFER TEMPORARY BONDING METHOD USING SI DIRECT BONDING(SDB), AND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF USING THE SAME BONDING METHOD

• Main Authors: CHOI, SEUNG WOO, KANG, PIL KYU, KIM, JUNG HO, LEE, JONG WOOK, BAE, DAE LOK
• Format: Patent
• Language: English; Korean
• Published: 26.03.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A provisional wafer provisional bonding method, a semiconductor device and a semiconductor device fabricating method using the bonding method instead of use the SDB(Silicon Direct Bonding) for the provisional bonding process the bonding layer are provided so that the fault of the white-grinding process caused by the non-uniformity of adhesive can be prevented. CONSTITUTION: A carrier wafer(100) and a device wafer(200a) are prepared. A roughness is controlled to be rough of the surface of the carrier wafer. The carrier wafer and device wafer are welded through SDB. It controls among the plasma processing, the wet etching, and the washing and thin film deposition through one or more method to be rough of the surface of device. It is processed in order to have the bonding strength of the extent capable of the separation of the surface the support thereafter possible the jointing step in the following back-grinding process to be rough.