LIGHT-EMITTING DEVICE WITH IMPROVED ELECTRODE STRUCTURES

PURPOSE: A light emitting device with improved electrode structures is provided to obtain superior light extraction efficiency with a low operational voltage using a thin and transparent conductive oxide layer as a current diffusion layer. CONSTITUTION: A light emitting layer(12) is formed between a...

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Bibliographic Details
Main Authors LESTER STEVEN D, LIN CHAO KUN
Format Patent
LanguageEnglish
Korean
Published 18.03.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A light emitting device with improved electrode structures is provided to obtain superior light extraction efficiency with a low operational voltage using a thin and transparent conductive oxide layer as a current diffusion layer. CONSTITUTION: A light emitting layer(12) is formed between a first and a second semiconductor layers(11, 13). A first electrode pattern layer is formed on the first semiconductor layer. A second electrode pattern layer is formed on the second semiconductor layer. The second electrode pattern layer includes an electrode body and a plurality of branch electrodes. The branch electrodes are expanded from the electrode body to the first electrode pattern layer.
Bibliography:Application Number: KR20090083846