BOOSTING FOR NON-VOLATILE STORAGE USING CHANNEL ISOLATION SWITCHING

• Main Authors: OOWADA KEN, DONG YINGDA, HEMINK GERRIT JAN, LUTZE JEFFREY W, LEE SHIH CHUNG
• Format: Patent
• Language: English; Korean
• Published: 16.03.2010
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

Program disturb is reduced in non-volatile storage by preventing source side boosting in selected NAND strings. A self-boosting mode which includes an isolation word line is used. A channel area of an inhibited NAND string is boosted on a source side of the isolation word line before the channel is...