BOOSTING FOR NON-VOLATILE STORAGE USING CHANNEL ISOLATION SWITCHING

Program disturb is reduced in non-volatile storage by preventing source side boosting in selected NAND strings. A self-boosting mode which includes an isolation word line is used. A channel area of an inhibited NAND string is boosted on a source side of the isolation word line before the channel is...

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Bibliographic Details
Main Authors OOWADA KEN, DONG YINGDA, HEMINK GERRIT JAN, LUTZE JEFFREY W, LEE SHIH CHUNG
Format Patent
LanguageEnglish
Korean
Published 16.03.2010
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Program disturb is reduced in non-volatile storage by preventing source side boosting in selected NAND strings. A self-boosting mode which includes an isolation word line is used. A channel area of an inhibited NAND string is boosted on a source side of the isolation word line before the channel is boosted on a drain side of the isolation word line. Further, storage elements near the isolation word line are kept in a conducting state during the source side boosting so that the source side channel is connected to the drain side channel. In this way, in selected NAND strings, source side boosting can not occur and thus program disturb due to source side boosting can be prevented. After the source side boosting, the source side channel is isolated from the drain side channel, and drain side boosting is performed.
Bibliography:Application Number: KR20097025581