METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PURPOSE: A manufacturing method of the semiconductor device has no bad effect, in which the semi-insulating film used for the high voltage-resistant of the semiconductor device, the internal pressure stabilization, the electric potential stabilization of electrode, the reduction of the internal pres...

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Bibliographic Details
Main Authors MURAKAMI JUNICHI, TAKANO KAZUTOYO, MINATO TADAHARU
Format Patent
LanguageEnglish
Korean
Published 15.03.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A manufacturing method of the semiconductor device has no bad effect, in which the semi-insulating film used for the high voltage-resistant of the semiconductor device, the internal pressure stabilization, the electric potential stabilization of electrode, the reduction of the internal pressure remains domain etc can be formed. CONSTITUTION: A manufacturing method of the semiconductor device comprises: a process forming the Al electrode on the P-type domain(100) a process of forming the inter-layer film consisting of when compared with al it is close with the Al electrode, Si and the material difficult to react(102) a process resist being spread in the inter-layer film, and of forming the predetermined resist pattern into the photo-mechanical process(104) a process etching the inter-layer film of the opening of the resist pattern, and of coming off resist(106) a process the inter-layer film is to mask after coming off resist and of doing the etching of the Al electrode(108) a process forming the semi-insulating film which contain Si on the inter-layer film(110) a process of doing the thermal process in order to improve the ohmic characteristic of P collector layer and collector electrode(112).
Bibliography:Application Number: KR20090043855