SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

• Main Authors: HIGASHITSUJI TEPPEI, MINAMI TOSHIFUMI
• Format: Patent
• Language: English; Korean
• Published: 12.03.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A semiconductor device and a method of manufacturing the same are provided to obtain a precise process by improving surface break down voltage and junction breakdown voltage. CONSTITUTION: A semiconductor device comprises a semiconductor substrate, an isolation insulating layer, a gate insulating layer(23), a gate electrode(24), source/drain diffusion layer(25,27), high concentration diffusion layers(26,28), contact wirings(31,32), and a first insulation layer(33). The semiconductor substrate comprises an isolating region and a device region. The isolation insulating layer is laid under the semiconductor substrate of the isolating region. The gate insulating layer is formed on the semiconductor substrate. The gate electrode is formed on the gate insulating layer. The source / drain diffusion layer are formed on the semiconductor substrate. The high concentration diffusion layer surrounds the source / drain diffusion layer. A contact wiring is formed on the semiconductor substrate in which the high concentration diffusion layer is formed. The first insulation layer is laid under the semiconductor substrate between the gate electrode and the contact wiring.