HYBRID PHASE SHIFT MASK AND THE METHOD FOR FABRICATING OF THE SAME

PURPOSE: A hybrid phase shift mask and a method for manufacturing the same are provided to secure the margin of a cleaning process in a mask manufacturing process by reducing the thickness of the phase shift layer in order to prevent a pattern collapse. CONSTITUTION: A hybrid phase shift mask includ...

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Bibliographic Details
Main Author HWANG, DAE HO
Format Patent
LanguageEnglish
Korean
Published 11.03.2010
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A hybrid phase shift mask and a method for manufacturing the same are provided to secure the margin of a cleaning process in a mask manufacturing process by reducing the thickness of the phase shift layer in order to prevent a pattern collapse. CONSTITUTION: A hybrid phase shift mask includes a substrate(100) and a mask pattern. The mask pattern is arranged on the substrate. The mask pattern includes a light transmission layer pattern(105) and a phase shift layer pattern(110). The transmittance of the light transmission layer pattern is equivalent to the transmittance of the substrate. The phase shift layer pattern induces the phase difference of 180-degree angle in the substrate. The thickness of the phase shift layer pattern is 360Å to 440Å.
Bibliography:Application Number: KR20080086885