TECHNIQUES FOR FORMING SHALLOW JUNCTIONS

Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group cons...

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Bibliographic Details
Main Authors AREVALO EDWIN A, HATEM CHRISTOPHER R, RENAU ANTHONY, ENGLAND JONATHAN GERALD
Format Patent
LanguageEnglish
Published 12.02.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of : digermane (GeH), germanium nitride (GeN), germanium-fluorine compounds (GF, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.
Bibliography:Application Number: KR20097022405