THE METHOD FOR FABRICATING ORGANIC THIN FILM TRANSISTOR USING SURFACE ENERGY CONTROL

PURPOSE: A method for manufacturing an organic thin film transistor is provided to achieve a low turn-on voltage and minimize a leakage current by controlling the surface energy of a gate isolation layer. CONSTITUTION: A gate isolation layer(130) is formed on the top part of a gate electrode(120) in...

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Bibliographic Details
Main Authors BAEK, KYU HA, DO, LEE MI
Format Patent
LanguageEnglish
Published 08.02.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for manufacturing an organic thin film transistor is provided to achieve a low turn-on voltage and minimize a leakage current by controlling the surface energy of a gate isolation layer. CONSTITUTION: A gate isolation layer(130) is formed on the top part of a gate electrode(120) in a substrate(110). A surface energy of a gate isolation layer is controlled. A semiconductor channel layer(150) on the top of the gate isolation layer formed by using a semiconductor material. A source electrode(160) and a drain electrode are formed in upper part of the semiconductor channel layer.
Bibliography:Application Number: KR20080074124