STORAGE ELEMENT AND STORAGE DEVICE

Storage elements (3) provided in a storage device (21) in matrices comprise resistance change elements (1) the electrical resistance values of which are changed by application of an electrical pulse having a positive or negative polarity and which maintain electrical resistance values after the chan...

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Bibliographic Details
Main Authors WEI ZHIQIANG, TAKAGI TAKESHI, MIKAWA TAKUMI, ARITA KOJI, KAWASHIMA YOSHIO
Format Patent
LanguageEnglish
Published 26.01.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Storage elements (3) provided in a storage device (21) in matrices comprise resistance change elements (1) the electrical resistance values of which are changed by application of an electrical pulse having a positive or negative polarity and which maintain electrical resistance values after the change and current suppression elements (2) for suppressing the current flowing during the application of the electrical pulse to the resistance change elements. The current suppression elements include first electrodes, second electrodes, and current suppression layers provided between the first electrodes and the second electrodes. The current suppression layers are composed of SiN(x is a positive real number).
Bibliography:Application Number: KR20097021953