MANUFACTURING METHOD FOR DISPLAY

• Main Authors: LEE, SEOK WOO, KANG, SU HYUK
• Format: Patent
• Language: English
• Published: 06.01.2010
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: A manufacturing method for a display is provided to implement excellent drive performance and reliability by mounting an advance transistor applied to SPC(Solid Phase Crystallization) as an active layer. CONSTITUTION: An active layer(130) is formed by performing the SPC(Solid Phase Crystallization) process on a first substrate. A buffer layer(131) of amorphous silicon(a-Si) is formed on an active layer under hydrogen of 90% ~ 97% and silane of 10% ~ 3%. An N-type impurity layer(132) is formed on the buffer layer, and the metal layer is formed in order to cover the N type impurity layer. The first etching method and the source(133a) and drain(133b) are formed by removing the metal layer, and the N-type impurity layer and the buffer layer are separate from a second etching.