CLEANING METHOD OF SEMICONDUCTOR DEVICE HAVING METAL LAYER

PURPOSE: A cleaning method of a semiconductor device having metal layer is provided to remove residue easily by adding CI gas in cleansing for removing the residue after separating a metal pattern. CONSTITUTION: An interlayer dielectric(102) is formed on the top of a semiconductor substrate(100). A...

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Bibliographic Details
Main Authors KIM, HYUN JOO, MYUNG, SEONG HWAN
Format Patent
LanguageEnglish
Published 06.01.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A cleaning method of a semiconductor device having metal layer is provided to remove residue easily by adding CI gas in cleansing for removing the residue after separating a metal pattern. CONSTITUTION: An interlayer dielectric(102) is formed on the top of a semiconductor substrate(100). A contact plug(108a) is formed in the inter-layer insulating film. A cleaning process of spraying a cleaning solution mixed with cleaning gas including distilled water and 17 elements on the semiconductor substrate. The cleaning gas is formed by mixing N2 gas and 17 elements. 17 element is one of Cl, and F or the Br gas. The cleaning solution includes HCl when using CL gas.
Bibliography:Application Number: KR20080060187