SOLID-STATE IMAGING DEVICE

A solid-state imaging device has pixels in matrix on a semiconductor substrate. Each pixel is provided with a photodiode which performs photoelectric conversion to incoming light, a read transistor for reading a signal charge from the photodiode, and a floating diffusion region for converting the re...

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Bibliographic Details
Main Author TERAKAWA SUMIO
Format Patent
LanguageEnglish
Published 15.12.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A solid-state imaging device has pixels in matrix on a semiconductor substrate. Each pixel is provided with a photodiode which performs photoelectric conversion to incoming light, a read transistor for reading a signal charge from the photodiode, and a floating diffusion region for converting the read signal charge into a voltage. A p-type well under an n-type formed layer of the photodiode is arranged at a position separated from a substrate surface on the side of the photodiode, and the p-type well under the read transistor is formed to reach the surface of the semiconductor substrate.
Bibliography:Application Number: KR20097020101