CMP SLURRY COMPOSITION FOR COPPER DAMASCENE PROCESS

• Main Authors: HAN, DEOK SU, KIM, SEOK JU, JEONG, EUN IL, PARK, HYU BUM
• Format: Patent
• Language: English; Korean
• Published: 03.11.2009
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

PURPOSE: A CMP slurry composition for copper damascene process is provided to reduce defect generation rate of scratch, to suppress influence of device by impurities, and to remove dishing or erosion generated during first grinding. CONSTITUTION: A secondary CMP slurry composition of a copper-containing substrate comprises: colloidal silica prepared by directly oxidizing silicon(Si) powder; a complexing agent; and aminoalcohol. The colloidal silica is prepared by oxidizing silicon powder in an aqueous solution in the presence of base catalyst. The colloidal silica has 5-200 nm average particle diameter and is included in the amount of 0.1-20 weight% based on the total amount of the slurry.