CMP SLURRY COMPOSITION FOR COPPER DAMASCENE PROCESS

PURPOSE: A CMP slurry composition for copper damascene process is provided to reduce defect generation rate of scratch, to suppress influence of device by impurities, and to remove dishing or erosion generated during first grinding. CONSTITUTION: A secondary CMP slurry composition of a copper-contai...

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Bibliographic Details
Main Authors HAN, DEOK SU, KIM, SEOK JU, JEONG, EUN IL, PARK, HYU BUM
Format Patent
LanguageEnglish
Korean
Published 03.11.2009
Subjects
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Summary:PURPOSE: A CMP slurry composition for copper damascene process is provided to reduce defect generation rate of scratch, to suppress influence of device by impurities, and to remove dishing or erosion generated during first grinding. CONSTITUTION: A secondary CMP slurry composition of a copper-containing substrate comprises: colloidal silica prepared by directly oxidizing silicon(Si) powder; a complexing agent; and aminoalcohol. The colloidal silica is prepared by oxidizing silicon powder in an aqueous solution in the presence of base catalyst. The colloidal silica has 5-200 nm average particle diameter and is included in the amount of 0.1-20 weight% based on the total amount of the slurry.
Bibliography:Application Number: KR20080039736