METHOD OF FORMING A BARRIER METAL LAYER IN A SEMICONDUCTOR DEVICE

PURPOSE: A method of forming a barrier metal layer in a semiconductor device is provided to form a barrier metal film with uniform thickness on a micro contact hole by forming the barrier metal under lower temperature with a metal nono-particle with uniform size. CONSTITUTION: A method of forming a...

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Bibliographic Details
Main Author SHIN, DAE GYU
Format Patent
LanguageEnglish
Published 23.09.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:PURPOSE: A method of forming a barrier metal layer in a semiconductor device is provided to form a barrier metal film with uniform thickness on a micro contact hole by forming the barrier metal under lower temperature with a metal nono-particle with uniform size. CONSTITUTION: A method of forming a barrier metal layer in a semiconductor device is comprised of the steps: providing a coating solution of the colloidal type containing the metal nano- particle; charging the particle charge of coating solution and charge on the surface on a contact hole formed on the semiconductor substrate(104) in opposite; and the metal nano-particle is adhered to the surface of contact hole by the attractive force of the electric charge which are opposite charge.
Bibliography:Application Number: KR20080025464